Spectroscopic characterization of acid generation and concentration and free volume evolution in chemically amplified resists
Papers from the Sixth International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, 22-26 April 2001, Napa Valley, California (Journal of vacuum science & technology, B, v. 20, no. 1)
Napa Valley, CA, United States
Measurement of proton concentration and local viscosity in a polymeric chemically amplified photoresist material was reported. These properties were interrogated using crystal violet, a cationic triphenylmethane dye molecule. The presence of two singlet electronic states in crystal violet explained the two-component population relaxation behavior of this family of molecules. Results suggested that the polymer matrix was sufficiently fluid to limit the long term stability of lithographic patterns writing process in this material.
Published Article/Book Citation
6th International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, April 22, 2001 - April 26, Napa Valley, CA, United states, 2002.