US Patent 7,492,022
United States Patent and Trademark Office
University of Iowa Research Foundation (Iowa City, IA, US)
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads.The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
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Hall, Kimberley C; Lau, Wayne H; Gündoǧdu, Kenan; Flatté, Michael E; and Boggess, Thomas F Non-magnetic semiconductor spin transistor. US Patent 7,492,022 filed February 28, 2005 and issued February 17, 2009. https://ir.uiowa.edu/patents/473