Document Type
Article
Peer Reviewed
1
Publication Date
7-28-2014
Journal/Book/Conference Title
Journal of Applied Physics
DOI of Published Version
10.1063/1.4891476
Start Page
043707-1
End Page
043707-4
Abstract
We predict that singly occupied carrier traps, produced by electrical stress or irradiation within organic semiconductors, can cause spin blockades and the large room-temperature magnetoresistance known as organic magnetoresistance. The blockade occurs because many singly occupied traps can only become as doubly occupied in a spin-singlet configuration. Magnetic-field effects on spin mixing during transport dramatically modify the effects of this blockade and produce magnetoresistance. We calculate the quantitative effects of these traps on organic magnetoresistance from percolation theory and find a dramatic nonlinear dependence of the saturated magnetoresistance on trap density, leading to values ∼20 %, within the theory's range of validity.
Keywords
OAfund
Journal Article Version
Version of Record
Published Article/Book Citation
Journal of Applied Physics 116:4 (2014) pp. 043707-1-043707-4. doi:10.1063/1.4891476
Rights
Copyright: © 2014 AIP Publishing LLC
URL
https://ir.uiowa.edu/physics_pubs/3