Document Type

Article

Peer Reviewed

1

Publication Date

8-21-2014

Journal/Book/Conference Title

Physical Review B

DOI of Published Version

10.1103/PhysRevB.90.060204

Abstract

We describe a regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance (∼20% ). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppressed. The behavior is described within a theoretical model describing the effect of carrier spin dynamics on the current.

Keywords

OAfund

Journal Article Version

Version of Record

Published Article/Book Citation

Physical Review B 90:6 (2014) pp. 060204-1-060204-5. doi:10.1103/PhysRevB.90.060204

Creative Commons License

Creative Commons License
This work is licensed under a Creative Commons Attribution 3.0 License.

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URL

https://ir.uiowa.edu/physics_pubs/4