Physical Review B
DOI of Published Version
We describe a regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance (∼20% ). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensitive to the doping level. For much greater doping concentrations the magnetoresistance is fully suppressed. The behavior is described within a theoretical model describing the effect of carrier spin dynamics on the current.
Journal Article Version
Version of Record
Published Article/Book Citation
Physical Review B 90:6 (2014) pp. 060204-1-060204-5. doi:10.1103/PhysRevB.90.060204
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